We at Vacuum Technology Inc. love to see our products be used to further scientific knowledge. Our customer, Chun Ning Lau, published a paper recently which relied in part on the use of our glove box systems. We would like to thank Chun Ning for her purchase of a VTI glove box, and look forward to seeing her research in the future! The abstract of the paper is listed below, as well as a link to view the entire work.

“Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional “which-layer” degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton ondensation. We demonstrate facile formation ofwideQWs in few-layer
black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.“

We at Vacuum Technology Inc. love to see our products be used to further scientific knowledge. Our customer, Chun Ning Lau, published a paper recently which relied in part on the use of our glove box systems. We would like to thank Chun Ning for her purchase of a VTI glove box, and look forward to seeing her research in the future! The abstract of the paper is listed below, as well as a link to view the entire work.

“Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nmat low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼T−0.4). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.”